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1

A comparative study on structural and electronic properties of PECVD a-SiOx with a-SiNx

Keiji Maeda, Naomichi Sakamoto, Ikurou Umezu

Journal:

Journal of Non-Crystalline Solids

Year:

1995

Language:

english

File:

PDF, 276 KB

english, 1995

2

Investigation of interface state density between a-Si:H and insulating layers by ESR and photothermal deflection spectroscopy

Ikurou Umezu, Kazuaki Kitamura, Keiji Maeda

Journal:

Journal of Non-Crystalline Solids

Year:

1996

Language:

english

File:

PDF, 295 KB

english, 1996

3

Mechanism of surface reaction in the deposition process of a -Si:H by rf glow discharge

Maeda, Keiji, Kuroe, Atsushi, Umezu, Ikurou

Journal:

Physical Review B

Year:

1995

Language:

english

File:

PDF, 523 KB

english, 1995

4

SPIE Proceedings [SPIE SPIE NanoScience + Engineering - San Diego, California (Sunday 21 August 2011)] Nanophotonic Materials VIII - Development of precise tuning method of inter-dot spacing and resonant energy transfer between Au clusters

Inada, Mitsuru, Yoshihara, Yoshihiro, Kawasaki, Hideya, Iwasaki, Yasuhiko, Saitoh, Tadashi, Umezu, Ikurou, Sugimura, Akira, Cabrini, Stefano, Mokari, Taleb

Year:

2011

Language:

english

File:

PDF, 4.08 MB

english, 2011

5

Synthesis of Ni-doped InTaO4 nanocrystallites by reactive pulsed laser ablation for application to visible-light-operating photocatalysts

Takehito Yoshida, Hirokazu Toyoyama, Ikurou Umezu, Akira Sugimura

Journal:

Applied Surface Science

Year:

2009

Language:

english

File:

PDF, 377 KB

english, 2009

6

Temperature dependence of time-resolved luminescence spectra for 1D excitons in single-walled carbon nanotubes in micelles

Masao Ichida, Ikurou Umezu, Hiromichi Kataura, Mio Kimura, Shinzo Suzuki, Yoji Achiba, Hiroaki Ando

Journal:

Journal of Luminescence

Year:

2005

Language:

english

File:

PDF, 211 KB

english, 2005

7

Formation of surface stabilized Si nanocrystal by pulsed laser ablation in hydrogen gas

Ikurou Umezu, Issei Kondo, Akira Sugimura

Journal:

Applied Physics A: Materials Science & Processing

Year:

2008

Language:

english

File:

PDF, 265 KB

english, 2008

8

InTaO4-based nanostructures synthesized by reactive pulsed laser ablation

Takehito Yoshida, Hirokazu Toyoyama, Ikurou Umezu, Akira Sugimura

Journal:

Applied Physics A: Materials Science & Processing

Year:

2008

Language:

english

File:

PDF, 985 KB

english, 2008

9

Emission induced by collision of two plumes during pulsed laser ablation

Ikurou Umezu, Shigeki Yamamoto, Akira Sugimura

Journal:

Applied Physics A: Materials Science & Processing

Year:

2010

Language:

english

File:

PDF, 381 KB

english, 2010

10

Synthesis of GaN nanocrystallites by pulsed laser ablation in pure nitrogen background gases

Takehito Yoshida, Soichiro Kakumoto, Akira Sugimura, Ikurou Umezu

Journal:

Applied Physics A: Materials Science & Processing

Year:

2011

Language:

english

File:

PDF, 506 KB

english, 2011

11

Interface state density of SiNX:H/c-Si MIS structure

Keiji Maeda, Toshihide Jinnai, Ikurou Umezu

Journal:

Journal of Non-Crystalline Solids

Year:

1993

Language:

english

File:

PDF, 269 KB

english, 1993

12

Atomic microstructure and electronic properties of a-SiNx:H deposited by PECVD

Keiji Maeda, Ikurou Umezu

Journal:

Journal of Non-Crystalline Solids

Year:

1991

Language:

english

File:

PDF, 246 KB

english, 1991

13

Defect formation mechanism during plasma enhanced chemical vapor deposition of undoped a-Si:H

Keiji Maeda, Ikurou Umezu

Journal:

Journal of Non-Crystalline Solids

Year:

1998

Language:

english

File:

PDF, 106 KB

english, 1998

14

A study of interface state density between a-Si:H and insulating layer in terms of plasma surface reaction

Ikurou Umezu, Takatsugu Tsuchida, Keiji Maeda

Journal:

Journal of Non-Crystalline Solids

Year:

1998

Language:

english

File:

PDF, 92 KB

english, 1998

15

Photoluminescence from Excited Energy Bands in Au$_{25}$ Nanoclusters

Sakanaga, Isamu, Inada, Mitsuru, Saitoh, Tadashi, Kawasaki, Hideya, Iwasaki, Yasuhiko, Yamada, Toshiki, Umezu, Ikurou, Sugimura, Akira

Journal:

Applied Physics Express

Year:

2011

Language:

english

File:

PDF, 677 KB

english, 2011

16

Depletion layer width in undoped a-Si:H Schottky barrier revealed by reverse bias photocurrent

Maeda, Keiji, Chiyoda, Wataru, Umezu, Ikurou, Kuroe, Atsushi

Journal:

Journal of Applied Physics

Year:

1994

Language:

english

File:

PDF, 1.29 MB

english, 1994

17

Effects of collision between two plumes on plume expansion dynamics during pulsed laser ablation in background gas

Ikurou Umezu, Naomichi Sakamoto, Hiroshi Fukuoka, Yasuhiro Yokoyama…

Journal:

Applied Physics A: Materials Science & Processing

Year:

2013

Language:

english

File:

PDF, 709 KB

english, 2013

18

Hyperdoping of silicon with deep-level impurities by pulsed YAG laser melting

Umezu, Ikurou, Naito, Muneyuki, Kawabe, Daisuke, Koshiba, Yusuke, Nagao, Katsuki, Sugimura, Akira, Aoki, Tamao, Inada, Mitsuru, Saitoh, Tadashi, Kohno, Atsushi

Journal:

Applied Physics A: Materials Science & Processing

Year:

2014

Language:

english

File:

PDF, 802 KB

english, 2014

19

Correlation between Photoluminescence Intensity and Micro Structure in Amorphous Silicon Films Prepared by Reactive RF Sputtering

Umezu, Ikurou, Murota, Takatoshi, Kawata, Masayuki, Takashima, Yoshiaki, Yoshida, Ken-ichi, Inada, Mitsuru, Sugimura, Akira

Journal:

Japanese Journal of Applied Physics

Year:

2000

Language:

english

File:

PDF, 51 KB

english, 2000

20

Evolution of Energy Transfer Process between Quantum Dots of Two Different Sizes during the Evaporation of Solvent

Lü, Wei, Umezu, Ikurou, Sugimura, Akira

Journal:

Japanese Journal of Applied Physics

Year:

2008

Language:

english

File:

PDF, 157 KB

english, 2008

21

Inter-Dot Distance Dependence of Photoluminescence Properties in CdSe Quantum Dot Systems

Tai, Kohei, Lü, Wei, Umezu, Ikurou, Sugimura, Akira

Journal:

Applied Physics Express

Year:

2010

Language:

english

File:

PDF, 659 KB

english, 2010

22

Structural properties of TiO2nanocrystallites condensed in vapor-phase for photocatalyst applications

Yoshida, Takehito, Yagi, Nobuyasu, Nakagou, Riki, Sugimura, Akira, Umezu, Ikurou

Journal:

Applied Physics A: Materials Science & Processing

Year:

2014

Language:

english

File:

PDF, 1.29 MB

english, 2014

23

[IEEE 2013 Conference on Lasers and Electro-Optics Pacific Rim (CLEO-PR) - Kyoto, Japan (2013.06.30-2013.07.4)] 2013 Conference on Lasers and Electro-Optics Pacific Rim (CLEOPR) - Hierarchical pattern structure in TiO2 nano-aggregates prepared by pulsed laser ablation in background gas

Umezu, Ikurou, Sugimura, Akira, Yoshida, Takehito

Year:

2013

Language:

english

File:

PDF, 986 KB

english, 2013

24

Effects of thermal processes on photoluminescence of silicon nanocrystallites prepared by pulsed laser ablation

Umezu, Ikurou, Shibata, Kosaku, Yamaguchi, Shoji, Sugimura, Akira, Yamada, Yuka, Yoshida, Takehito

Journal:

Journal of Applied Physics

Year:

1998

Language:

english

File:

PDF, 285 KB

english, 1998

25

Effect of structure on radiative recombination processes in amorphous silicon suboxide prepared by rf sputtering

Yoshida, Ken’ichi, Umezu, Ikurou, Sakamoto, Naomichi, Inada, Mitsuru, Sugimura, Akira

Journal:

Journal of Applied Physics

Year:

2002

Language:

english

File:

PDF, 317 KB

english, 2002

26

Surface hydrogenation of silicon nanocrystallites during pulsed laser ablation of silicon target in hydrogen background gas

Umezu, Ikurou, Takata, Masatoshi, Sugimura, Akira

Journal:

Journal of Applied Physics

Year:

2008

Language:

english

File:

PDF, 702 KB

english, 2008

27

Photoluminescence properties of amorphous silicon-based oxygen and hydrogen alloys

Umezu, Ikurou, Yoshida, Ken-ichi, Sakamoto, Naomichi, Murota, Takatoshi, Takashima, Yoshiaki, Inada, Mitsuru, Sugimura, Akira

Journal:

Journal of Applied Physics

Year:

2002

Language:

english

File:

PDF, 291 KB

english, 2002

28

Reaction between nitrogen gas and silicon species during pulsed laser ablation

Umezu, Ikurou, Inada, Mitsuru, Kohno, Kimihiro, Yamaguchi, Tomohiro, Makino, Toshiharu, Sugimura, Akira

Journal:

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Year:

2003

Language:

english

File:

PDF, 349 KB

english, 2003

29

Effect of gas pressure on reactive pulsed laser ablation of a silicon target

Inada, Mitsuru, Umezu, Ikurou, Sugimura, Akira

Journal:

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Year:

2003

Language:

english

File:

PDF, 341 KB

english, 2003

30

Effect of plasma treatment on the density of defects at an amorphous Si:H-insulator interface

Umezu, Ikurou, Kuwamura, Takahiro, Kitamura, Kazuaki, Tsuchida, Takatsugu, Maeda, Keiji

Journal:

Journal of Applied Physics

Year:

1998

Language:

english

File:

PDF, 359 KB

english, 1998

31

Formation of nanoscale fine-structured silicon by pulsed laser ablation in hydrogen background gas

Umezu, Ikurou, Sugimura, Akira, Inada, Mitsuru, Makino, Toshiharu, Matsumoto, Kimihisa, Takata, Masatoshi

Journal:

Physical Review B

Year:

2007

Language:

english

File:

PDF, 398 KB

english, 2007

32

Defect formation during deposition of undoped a-Si:H by rf glow discharge

Maeda, Keiji, Umezu, Ikurou, Ishizuka, Hotaka

Journal:

Physical Review B

Year:

1997

Language:

english

File:

PDF, 185 KB

english, 1997

33

Fabrication and subband gap optical properties of silicon supersaturated with chalcogens by ion implantation and pulsed laser melting

Bob, Brion P., Kohno, Atsushi, Charnvanichborikarn, Supakit, Warrender, Jeffrey M., Umezu, Ikurou, Tabbal, Malek, Williams, James S., Aziz, Michael J.

Journal:

Journal of Applied Physics

Year:

2010

Language:

english

File:

PDF, 718 KB

english, 2010

34

Emergence of very broad infrared absorption band by hyperdoping of silicon with chalcogens

Umezu, Ikurou, Warrender, Jeffrey M., Charnvanichborikarn, Supakit, Kohno, Atsushi, Williams, James S., Tabbal, Malek, Papazoglou, Dimitris G., Zhang, Xi-Cheng, Aziz, Michael J.

Journal:

Journal of Applied Physics

Year:

2013

Language:

english

File:

PDF, 1.00 MB

english, 2013

35

Formation of core-shell structured silicon nanoparticles during pulsed laser ablation

Umezu, Ikurou, Nakayama, Yusuke, Sugimura, Akira

Journal:

Journal of Applied Physics

Year:

2010

Language:

english

File:

PDF, 393 KB

english, 2010

36

Deposition of silicon nitride films by pulsed laser ablation of the Si target in nitrogen gas

Umezu, Ikurou, Kohno, Kiminori, Yamaguchi, Tomohiro, Sugimura, Akira, Inada, Mitsuru

Journal:

Journal of Vacuum Science & Technology A Vacuum Surfaces and Films

Year:

2002

Language:

english

File:

PDF, 392 KB

english, 2002

37

Oxidation processes of surface hydrogenated silicon nanocrystallites prepared by pulsed laser ablation and their effects on the photoluminescence wavelength

Umezu, Ikurou, Sugimura, Akira, Makino, Toshiharu, Inada, Mitsuru, Matsumoto, Kimihisa

Journal:

Journal of Applied Physics

Year:

2008

Language:

english

File:

PDF, 681 KB

english, 2008

38

Investigation of SiNX:H/Si interface by capacitance method

Maeda, Keiji, Umezu, Ikurou, Kawaguchi, Akio

Journal:

Applied Physics Letters

Year:

1991

Language:

english

File:

PDF, 528 KB

english, 1991

39

Nanoscale anodization of an amorphous silicon surface with an atomic force microscope

Umezu, Ikurou, Yoshida, Takashi, Matsumoto, Kimihisa, Sugimura, Akira, Inada, Mitsuru

Journal:

Applied Physics Letters

Year:

2002

Language:

english

File:

PDF, 260 KB

english, 2002

40

Atomic microstructure and electronic properties of a-SiNx:H deposited by radio frequency glow discharge

Maeda, Keiji, Umezu, Ikurou

Journal:

Journal of Applied Physics

Year:

1991

Language:

english

File:

PDF, 1.61 MB

english, 1991

41

Resonance Raman Scattering of Br 2 Doped Single-Walled Carbon Nanotube Bundles

Kataura, Hiromichi, Kumazawa, Yoshinori, Kojima, Noriaki, Maniwa, Yutaka, Umezu, Ikurou, Masubuchi, Shinichi, Kazama, Shigeo, Ohtsuka, Yohsuke, Suzuki, Shinzo, Achiba, Yohji

Journal:

Molecular Crystals and Liquid Crystals Science and Technology Section A Molecular Crystals and Liquid Crystals

Year:

2000

Language:

english

File:

PDF, 251 KB

english, 2000

42

Formation of Hydrogen-passivated Silicon Nanochains by Pulsed Laser Ablation without Thermal Annealing

Inada, Mitsuru, Umezu, Ikurou, Tanaka, Shukichi, Mashiko, Shinro, Sugimura, Akira

Journal:

MRS Proceedings

Year:

2004

Language:

english

File:

PDF, 2.84 MB

english, 2004

43

Effect of Non-equilibrium Pulsed Ejection of Si Species into Background Gas on the Formation of Si Nanocrystallite and Nanocrystal-film

Umezu, Ikurou, Okubo, Shunto, Sugimura, Akira

Journal:

MRS Proceedings

Year:

2011

Language:

english

File:

PDF, 3.67 MB

english, 2011

44

Non-equilibrium Growth Processes of Porous TiO2 Nanocrystal-films during Pulsed Laser Ablation

Umezu, Ikurou, Yagi, Nobuyasu, Sugimura, Akira, Yoshida, Takehito

Journal:

MRS Proceedings

Year:

2013

Language:

english

File:

PDF, 3.64 MB

english, 2013

45

Sulfur- K X-Ray Spectra and Electronic Structure of a Semiconductor Ag 2 S

Sugiura, Chikara, Kitamura, Michihide, Muramatsu, Shinji, Shoji, Shizuko, Kojima, Shinjiro, Tada, Yoshifumi, Umezu, Ikurou, Arai, Toshihiro

Journal:

Japanese Journal of Applied Physics

Year:

1988

File:

PDF, 608 KB

1988

46

[AIP PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27 - Flagstaff, Arizona (USA) (26-30 July 2004)] AIP Conference Proceedings - Correlation between PL emission band and growth of oxide layer on surface of silicon nanocrystallites

Year:

2005

Language:

english

File:

PDF, 203 KB

english, 2005

47

[AIP PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27 - Flagstaff, Arizona (USA) (26-30 July 2004)] AIP Conference Proceedings - Correlation between electronic structure and chemical bond on the surface of hydrogenated silicon nanocrystallites

Year:

2005

Language:

english

File:

PDF, 199 KB

english, 2005

48

[AIP PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27 - Flagstaff, Arizona (USA) (26-30 July 2004)] AIP Conference Proceedings - Preparation of surface controlled silicon nanocrystallites by pulsed laser ablation

Year:

2005

Language:

english

File:

PDF, 76 KB

english, 2005

49

Analysis of Joule Heat in a-Si:H Film by Photothermal Deflection Spectroscopy

Umezu, Ikurou, Maeda, Keiji

Journal:

Japanese Journal of Applied Physics

Year:

1994

File:

PDF, 708 KB

1994

50

Structural and optical properties of surface-hydrogenated silicon nanocrystallites prepared by reactive pulsed laser ablation

Makino, Toshiharu, Inada, Mitsuru, Umezu, Ikurou, Sugimura, Akira

Journal:

Journal of Physics D Applied Physics

Year:

2005

Language:

english

File:

PDF, 285 KB

english, 2005